Published November 29, 2017
| Version v1
Journal article
Sn whisker growth mitigation by using NiO sublayers
- 1. Department of Electrical Engineering and Computer Science, University of Toledo, Toledo, OH 43606, United States of America (United States)
Description
The potential of NiO sublayers for whisker growth mitigation has been examined. A thin NiO film was applied on a Cu-coated substrate before the deposition of a thicker Sn layer. The growth of Sn whiskers was then followed by optical and scanning electron microscopy and was compared with the whisker growth on a control sample without the NiO sublayer. No whiskers were observed on the sample with the NiO layer even after 12 months, whereas the control sample developed whiskers of size and density that is generally expected, based on the vast amount of published work on the topic. The mechanisms of whisker growth and whisker growth suppression are briefly discussed as well. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1361-6463/aa8ec7Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 50
- Journal Issue
- 47
- Journal Page Range
- [7 p.]
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 49029585
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- CONTROL; DEPOSITION; ELECTRON SCANNING; FILMS; LAYERS; MITIGATION; NICKEL OXIDES; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; WHISKERS
- Descriptors DEC
- CHALCOGENIDES; CRYSTALS; ELECTRON MICROSCOPY; MICROSCOPY; MONOCRYSTALS; NICKEL COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; TRANSITION ELEMENT COMPOUNDS