Published November 29, 2017 | Version v1
Journal article

Sn whisker growth mitigation by using NiO sublayers

  • 1. Department of Electrical Engineering and Computer Science, University of Toledo, Toledo, OH 43606, United States of America (United States)

Description

The potential of NiO sublayers for whisker growth mitigation has been examined. A thin NiO film was applied on a Cu-coated substrate before the deposition of a thicker Sn layer. The growth of Sn whiskers was then followed by optical and scanning electron microscopy and was compared with the whisker growth on a control sample without the NiO sublayer. No whiskers were observed on the sample with the NiO layer even after 12 months, whereas the control sample developed whiskers of size and density that is generally expected, based on the vast amount of published work on the topic. The mechanisms of whisker growth and whisker growth suppression are briefly discussed as well. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6463/aa8ec7

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
50
Journal Issue
47
Journal Page Range
[7 p.]
ISSN
0022-3727
CODEN
JPAPBE

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
49029585
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
CONTROL; DEPOSITION; ELECTRON SCANNING; FILMS; LAYERS; MITIGATION; NICKEL OXIDES; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; WHISKERS
Descriptors DEC
CHALCOGENIDES; CRYSTALS; ELECTRON MICROSCOPY; MICROSCOPY; MONOCRYSTALS; NICKEL COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; TRANSITION ELEMENT COMPOUNDS