Published 1976 | Version v1
Report

Measurement of the superconducting energy gap anisotropy in single crystal gallium by superconductor-normal metal tunneling

Description

Experiments are performed to answer some concerns regarding energy gap anisotropy. These experiments eliminate difficulties with (a) ac electronics, (b) negative resistance in S-S' junctions, (c) temperature extrapolation of 2Δ(T)/kT/sub c/ to T = 0, (d) noise pickup and, (e) sample preparation. The dc I-V curves of 15 N-S Ag(film)-Ga(crystal) tunnel junctions at 12 orientations in the Ga A-B plane (grown in a controlled environment room) were measured in a dilution refrigerator (T/T/sub c/ approximately 0.1) in a well shielded room. The data were digitized and fit to BCS-based theoretical I-V curves. The precision of 2Δ(O)/kT/sub c/ in the fits is 3-5 x 10-2 percent and the repeatability is 0.3 percent. 2Δ(O)/kT/sub c/ varies by 7 percent from the Ga A to B axis in good agreement with prior measurements

Availability note (English)

University Microfilms Order No. 76-26,794.

Additional details

Publishing Information

Imprint Pagination
167 p.

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
8321024
Subject category
S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Resource subtype / Literary indicator
Thesis, Non-conventional Literature
Descriptors DEI
ANISOTROPY; ELECTRICAL PROPERTIES; ENERGY GAP; GALLIUM; MONOCRYSTALS; SILVER; SUPERCONDUCTING JUNCTIONS; SUPERCONDUCTIVITY; TUNNEL EFFECT
Descriptors DEC
CRYSTALS; ELECTRIC CONDUCTIVITY; ELEMENTS; METALS; PHYSICAL PROPERTIES; TRANSITION ELEMENTS