Variation of properties of near-to-surface layers in CdxHg1-xTe crystals due to electron beam action

Using method of electron beam indiced current variation of electric properties by near-the-surface layers in CdxHg1-xTe crystals under the effect of low-energy electrons is detected. Even at small irradiation times built-in electric field efficiently separating nonequilibrium charge cariers arises in near-the-surface crystal layer of both n- and p-type conductivity. Its appearance is due to increase of acceptor centers concentration and formation of wider-band material in the area adjacent to the place of action. Attention is paid to the effect of crystal defect structure in observed variations