Published May 1984 | Version v1
Report Open

Ion implantation of Indium in Hgsub(1-x)Cdsub(x)Te

Creators

Description

In this paper, the author shows that it is possible to produce n-p junctions in Hgsub(1-x)Cdsub(x)Te by ion implantation and in which the N zone is not induced by the irradiation defects but by the electrically activated (annealing) indium trace amounts

Availability note (English)

MF available from INIS under the Report Number.

Abstract (French)

Dans cet article, on montre qu'il est possible de realiser dans Hgsub(1-x)Cdsub(x)Te des jonctions n/p par implantation ionique dans lesquelles la zone N n'est plus due aux defauts d'irradiation mais aux impuretes Indium activees electriquement par un recuit

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Additional details

Additional titles

Original title (French)
Implantation ionique d'indium dans Hgsub(1-x)Cdsub(x)Te

Publishing Information

Imprint Pagination
3 p.
Report number
CEA-CONF--7504

Conference

Title
MCT US workshop.
Dates
15-17 May 1984.
Place
San Diego, CA (USA).

INIS

Country of Publication
France
Country of Input or Organization
France
INIS RN
16063084
Subject category
S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANNEALING; CADMIUM TELLURIDES; CHEMICAL COMPOSITION; DOPED MATERIALS; INDIUM; ION IMPLANTATION; MERCURY TELLURIDES; TRACE AMOUNTS
Descriptors DEC
CADMIUM COMPOUNDS; CHALCOGENIDES; ELEMENTS; HEAT TREATMENTS; MATERIALS; MERCURY COMPOUNDS; METALS; TELLURIDES; TELLURIUM COMPOUNDS