Published 2006 | Version v1
Journal article Metadata-only

Investigation of InAs quantum dot growth for electrical spin injection devices

Creators

  • 1. Institut fuer Angewandte Physik and DFG Center for Functional Nanostructures (CFN), Universitaet Karlsruhe (Thailand), 76128 Karlsruhe (DE)
  • 2. Laboratorium fuer Elektronenmikroskopie and CFN, Universitaet Karlsruhe (Thailand), 76128 Karlsruhe (DE)

Description

The influence of the growth conditions during molecular-beam epitaxy on the properties of InAs/GaAs quantum dot structures were systematically investigated by low temperature photoluminescence spectroscopy and transmission electron microscopy. The circular polarization degree (CPD) of the electroluminescence was compared for two quantum-dot spin-injection light-emitting diodes. The CPD depends on the position of the emission energy in the luminescence band. This correlation is similar for both samples despite the strongly different quantum dot morphologies. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssc.200671556

Additional details

Identifiers

DOI
10.1002/pssc.200671556;

Publishing Information

Journal Title
Physica Status Solidi. C, Conferences
Journal Volume
3
Journal Issue
11
Journal Page Range
p. 3943-3946
ISSN
1610-1634

Conference

Title
4. International conference on semiconductor quantum dots (QD2006)
Dates
1-5 May 2006
Place
Chamonix-Mont Blanc (France)

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
38009879
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CRYSTAL GROWTH; ELECTROLUMINESCENCE; EMISSION SPECTRA; ENERGY SPECTRA; GALLIUM ARSENIDES; INDIUM ARSENIDES; INFRARED SPECTRA; LIGHT EMITTING DIODES; MAGNETIC FIELDS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; POLARIZATION; QUANTUM DOTS; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0400-1000 K; TRANSMISSION ELECTRON MICROSCOPY
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; ELECTRON MICROSCOPY; EMISSION; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; MICROSCOPY; NANOSTRUCTURES; PHOTON EMISSION; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SPECTRA; TEMPERATURE RANGE

Optional Information

Notes
With 2 figs., 10 refs.. SICI: 1610-1634(200612)3:11<3943::AID-PSSC200671556>3.0.TX;2-3