Optical simulation and investigation of different coating methods CdS&TiO${}_2$ for buffer layer in CIGS solar cell efficiency

The Copper indium gallium selenide (CIGS) solar cells are considered to be an jubilant candidate for the advanced future photovoltaic technology. In this research, the structure of the CIGS solar cell with two buffer layers of CdS and TiO${}_2$ that has been studied. The deposited CIGS films were selenized by electrical method under argon atmosphere at high temperature. This process was performed on the fluorine-doped tin oxide-coated (FTO) substrate. Eventually, 300 nm silver was deposited by evaporation method as the cathode. Different parameters of this structure were simulated by using SCAPS software. Subsequently, according to the simulation results, the role of the active layer was investigated and the optimum thickness. Also, CIGS solar cells are simulated by real parameters (energy gap, donor and acceptor carrier density, carrier density of the conduction band edge, conductivity). To our knowledge, proposed structure of the CIGS solar cells is easier compared to different structures proposed until now.