Published 1981 | Version v1
Miscellaneous

Damaging channeling

Description

It is shown that channeling of ions injected into the crystal at the angles to the channeling angle is followed by formation of radiation damages. The rate of defect formation and the thickness of the damaged layer essentially depend on the injection conditions and vary in wide ranges that makes it possible to use the discovered effect for controlled formation of damage profiles

Additional details

Additional titles

Original title (Russian)
Разрушающее каналирование

Publishing Information

Imprint Title
Radiation damage physics and radiation material science
Journal Issue
no. 2(16
Series
Voprosy atomnoj nauki i tekhniki.
Journal Page Range
p. 37-38.
Report number
INIS-SU--142

Conference

Title
All-union conference on radiation physics of solids.
Dates
24 - 27 Feb 1981.
Place
Zvenigorod (USSR).

INIS

Country of Publication
USSR
Country of Input or Organization
USSR
INIS RN
14743964
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CHANNELING; COMPUTERIZED SIMULATION; CRYSTAL DEFECTS; CRYSTALS; KEV RANGE 01-10; NICKEL; NICKEL IONS
Descriptors DEC
ATOMIC IONS; CHARGED PARTICLES; CRYSTAL STRUCTURE; ELEMENTS; ENERGY RANGE; IONS; KEV RANGE; METALS; SIMULATION; TRANSITION ELEMENTS

Optional Information

Notes
1 ref.; 3 figs. Imprint:Fizika radiatsionnykh povrezhdenij i radiatsionnoe materialovedenie.