Published 1997 | Version v1
Report Restricted

Latent interface traps and 1/f noise in irradiated MOS devices

Creators

Description

A delayed increase in 1/f noise is observed for pMOS transistors showing latent radiation-induced interface-trap buildup. The latent interface traps and increased noise appear to result from the same thermally activated process, likely involving hydrogen

Availability note (English)

Available from INIS in electronic form and/or on microfiche ; Also available from OSTI as DE97003212; NTIS; US Govt. Printing Office Dep.

Files

Restricted

The record is publicly accessible, but files are restricted to users with access.

Additional details

Publishing Information

Imprint Pagination
5 p.
Report number
SAND--97-0348C

Conference

Title
34. IEEE nuclear and space radiation effects conference.
Dates
21-25 Jul 1997.
Place
Snowmass, CO (United States).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
29006648
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CRYSTAL DEFECTS; HYDROGEN; MOS TRANSISTORS; NOISE; PHYSICAL RADIATION EFFECTS; TRAPS
Descriptors DEC
CRYSTAL STRUCTURE; ELEMENTS; NONMETALS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TRANSISTORS

Optional Information

Contract/Grant/Project number
Contract AC04-94AL85000
Funding organization
USDOE, Washington, DC (United States).
Secondary number(s)
CONF-970711--13.