Residual electrical resistivity of indium lead and indium thallium diluted alloys
Creators
- 1. Universidad de Oriente (UDO). Cumana (Venezuela)
Description
The residual electrical resistivity of In-0.522% at. Pb and In 1.060% at. TI alloys have been calculated into the theoretical frame established by the pseudopotential theory. The electron-impurity scattering was defined by means of the Ziman approach, considering two scattering potential types: The Aschroft and the Heine-Animalu-Abarenkov modified potentials. The Fermi surface was evaluated in the 80PW model for pure indium under relativistic and non relativist approaches, and the transport integrals which are defined on those surfaces were calculated using the finite element method. Our results are very sensible to the scattering potential and are affected by the Fermi surface type considered. The results obtained by use of the Fermi surface calculation through the relativistic approach and with the Heine-Animalu-Abarenkov potential are in agreement with those reported in the literature
Additional details
Additional titles
- Original title (Spanish)
- Resistividad electrica residual en aleaciones diluidas de indio plomo e indio talio
Publishing Information
- Journal Title
- Acta Cientifica Venezolana
- Journal Volume
- 49
- Journal Issue
- 2
- Journal Page Range
- p. 111-122
- ISSN
- 0001-5504
- CODEN
- ACVEAV
INIS
- Country of Publication
- Venezuela
- Country of Input or Organization
- Venezuela
- INIS RN
- 31027675
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ELECTRIC CONDUCTIVITY; FERMI LEVEL; INDIUM ADDITIONS; LEAD ALLOYS; POTENTIALS; THALLIUM ALLOYS
- Descriptors DEC
- ALLOYS; ELECTRICAL PROPERTIES; ENERGY LEVELS; PHYSICAL PROPERTIES