Published 1998 | Version v1
Journal article

Residual electrical resistivity of indium lead and indium thallium diluted alloys

  • 1. Universidad de Oriente (UDO). Cumana (Venezuela)

Description

The residual electrical resistivity of In-0.522% at. Pb and In 1.060% at. TI alloys have been calculated into the theoretical frame established by the pseudopotential theory. The electron-impurity scattering was defined by means of the Ziman approach, considering two scattering potential types: The Aschroft and the Heine-Animalu-Abarenkov modified potentials. The Fermi surface was evaluated in the 80PW model for pure indium under relativistic and non relativist approaches, and the transport integrals which are defined on those surfaces were calculated using the finite element method. Our results are very sensible to the scattering potential and are affected by the Fermi surface type considered. The results obtained by use of the Fermi surface calculation through the relativistic approach and with the Heine-Animalu-Abarenkov potential are in agreement with those reported in the literature

Additional details

Additional titles

Original title (Spanish)
Resistividad electrica residual en aleaciones diluidas de indio plomo e indio talio

Publishing Information

Journal Title
Acta Cientifica Venezolana
Journal Volume
49
Journal Issue
2
Journal Page Range
p. 111-122
ISSN
0001-5504
CODEN
ACVEAV

INIS

Country of Publication
Venezuela
Country of Input or Organization
Venezuela
INIS RN
31027675
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ELECTRIC CONDUCTIVITY; FERMI LEVEL; INDIUM ADDITIONS; LEAD ALLOYS; POTENTIALS; THALLIUM ALLOYS
Descriptors DEC
ALLOYS; ELECTRICAL PROPERTIES; ENERGY LEVELS; PHYSICAL PROPERTIES