Published January 2018
| Version v1
Journal article
Signal coupling to embedded pitch adapters in silicon sensors
- 1. Syracuse University, Syracuse, NY (United States)
- 2. Universität Zürich, Zürich (Switzerland)
Description
We have examined the effects of embedded pitch adapters on signal formation in n-substrate silicon microstrip sensors with data from beam tests and simulation. According to simulation, the presence of the pitch adapter metal layer changes the electric field inside the sensor, resulting in slowed signal formation on the nearby strips and a pick-up effect on the pitch adapter. This can result in an inefficiency to detect particles passing through the pitch adapter region. All these effects have been observed in the beam test data.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.nima.2017.09.039Additional details
Identifiers
- DOI
- 10.1016/j.nima.2017.09.039;
- PII
- S0168900217310094;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 877
- Journal Page Range
- p. 252-258
- ISSN
- 0168-9002
- CODEN
- NIMAER
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 53029520
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- BEAMS; COUPLING; ELECTRIC FIELDS; IRRADIATION; LAYERS; METALS; SENSORS; SIGNALS; SIMULATION; SUBSTRATES
- Descriptors DEC
- ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2017 CERN for the benefit of the Authors. Published by Elsevier B.V.