Published January 2018 | Version v1
Journal article

Signal coupling to embedded pitch adapters in silicon sensors

  • 1. Syracuse University, Syracuse, NY (United States)
  • 2. Universität Zürich, Zürich (Switzerland)

Description

We have examined the effects of embedded pitch adapters on signal formation in n-substrate silicon microstrip sensors with data from beam tests and simulation. According to simulation, the presence of the pitch adapter metal layer changes the electric field inside the sensor, resulting in slowed signal formation on the nearby strips and a pick-up effect on the pitch adapter. This can result in an inefficiency to detect particles passing through the pitch adapter region. All these effects have been observed in the beam test data.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.nima.2017.09.039

Additional details

Identifiers

DOI
10.1016/j.nima.2017.09.039;
PII
S0168900217310094;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Journal Volume
877
Journal Page Range
p. 252-258
ISSN
0168-9002
CODEN
NIMAER

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
53029520
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
BEAMS; COUPLING; ELECTRIC FIELDS; IRRADIATION; LAYERS; METALS; SENSORS; SIGNALS; SIMULATION; SUBSTRATES
Descriptors DEC
ELEMENTS

Optional Information

Copyright
Copyright (c) 2017 CERN for the benefit of the Authors. Published by Elsevier B.V.