Published 2005 | Version v1
Computer medium

Analysis of satellite peaks generation in MGR Si diode

  • 1. Pontificia Univ. Catolica de Sao Paulo, SP (Brazil). Dept. de Fisica
  • 2. Instituto de Pesquisas Energeticas e Nucleares (IPEN), Sao Paulo, SP (Brazil)

Description

In this work we present the studies about the origin of the satellite peaks that have been observed in alpha spectra obtained with an implanted silicon diode (type Al/p+/n/n+/Al). The results have shown that these peaks are due to the induced charge on the signal electrode by the guard rings of the diode. It is also demonstrated that this phenomenon depends on the potential distribution among the guard rings and is less important when they are floating. (author)

Part of:
Study of semiconductor detectors applied to diagnostic X-ray

Additional details

Publishing Information

ISBN
85-99141-01-5
Imprint Title
Proceedings of the INAC 2005: International nuclear atlantic conference. Nuclear energy reducing global warming; 14. Brazilian national meeting on reactor physics and thermal hydraulics; 7. Brazilian national meeting on nuclear applications
Imprint Pagination
[4886 p.]
Journal Page Range
[5 p.]

Conference

Title
International nuclear atlantic conference. Nuclear energy reducing global warming; 14. Brazilian national meeting on reactor physics and thermal hydraulics; 7. Brazilian national meeting on nuclear applications
Acronym
INAC 2005
Dates
28 Aug - 2 Sep 2005
Place
Santos, SP (Brazil)

Optional Information

Notes
2 refs., 4 figs. Code: 2188.pdf Imprint:Published only in CD-Rom