Published January 1, 2014 | Version v1
Journal article Metadata-only

Electrical properties of CuxZnySnS4 films with different Cu/Zn ratios

Creators

  • 1. Department of Physics, National Changhua University of Education, Changhua 500, Taiwan (China)
  • 2. Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan (China)
  • 3. Department of Automatic Control Engineering, Feng Chia University, Taichung 407, Taiwan (China)
  • 4. Precision Instrument Support Center, Feng Chia University, Taichung 407, Taiwan (China)

Description

p-Type conduction in Cu2ZnSnS4 (CZTS) thin films was realized by the sol–gel method. Measurements of electrical properties with the changes in the Cu/Zn ratio were carried out to determine defect behaviors. Combining with Hall, Raman, scanning electron microscopy, X-ray photoelectron spectroscopy and X-ray diffraction results, a direct link between the CuZn antisite, conduction type and hole concentration of CZTS films was established. Types of conduction and carrier density in CZTS films were found to be dependent on the Cu/Zn ratio. The formation of p-type conductivity in CZTS films might be due to the increased CuZn density

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2013.10.134

Additional details

Identifiers

DOI
10.1016/j.tsf.2013.10.134;
PII
S0040-6090(13)01750-1;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
550
Journal Page Range
p. 525-529
ISSN
0040-6090
CODEN
THSFAP

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46128640
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CARRIER DENSITY; CONCENTRATION RATIO; COPPER COMPOUNDS; ELECTRIC CONDUCTIVITY; HALL EFFECT; HOLES; P-TYPE CONDUCTORS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; THIN FILMS; TIN SULFIDES; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC COMPOUNDS
Descriptors DEC
CHALCOGENIDES; COHERENT SCATTERING; DIFFRACTION; DIMENSIONLESS NUMBERS; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; ELECTRON SPECTROSCOPY; FILMS; LASER SPECTROSCOPY; MATERIALS; MICROSCOPY; PHOTOELECTRON SPECTROSCOPY; PHYSICAL PROPERTIES; SCATTERING; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; SULFIDES; SULFUR COMPOUNDS; TIN COMPOUNDS; TRANSITION ELEMENT COMPOUNDS

Optional Information

Copyright
Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.