Implantation of 111In in NTD<111>Si by heavy ion recoil technique

Heavy ion recoil implantation technique has been used to implant 111In in n-type <111> silicon using medium energy heavy ion accelerator Pelletron, at TIFR, Colaba, Mumbai. The nuclear reaction used for this purpose was 109Ag(7Li,p4n)111In. The beam energy was optimised to be 50 MeV for maximum concentration of the implanted probe atoms. The gamma-ray spectrum of the implanted sample after 24 hours was found to contain only 171 and 245 keV gamma rays of 111In. The penetration depth of ion is increased to 1.6 μm by heavy ion recoil implantation technique as compared to 0.16 μm with the conventional ion implantation technique. (author)