Published 2001 | Version v1
Miscellaneous Metadata-only

Modification of the TiBx-n-n+-GaAs interface properties induced by microwave treatment and rapid thermal annealing

Creators

  • 1. Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine, Kiev (Ukraine)

Description

no abstract available

Part of:
Abstracts of 6. International Conference on Intermolecular Interactions in Matter

Additional details

Publishing Information

Imprint Title
Abstracts of 6. International Conference on Intermolecular Interactions in Matter
Imprint Pagination
[L.1-L.10; O1-O17; P.1-P.48]
Journal Page Range
p. O9

Conference

Title
6. International Conference on Intermolecular Interactions in Matter
Dates
10-13 Sep 2001
Place
Gdansk-Jelitkowo (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
33063272
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
ANNEALING; ATOMIC FORCE MICROSCOPY; ELECTRIC CONDUCTIVITY; ELLIPSOMETRY; GALLIUM ARSENIDES; INTERFACES; LAYERS; LINE BROADENING; MICROWAVE RADIATION; SPECTRAL REFLECTANCE; STRESS RELAXATION; SUBSTRATES; THIN FILMS; TITANIUM BORIDES
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; BORIDES; BORON COMPOUNDS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; FILMS; GALLIUM COMPOUNDS; HEAT TREATMENTS; MEASURING METHODS; MICROSCOPY; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; PNICTIDES; RADIATIONS; RELAXATION; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS

Optional Information