Defects formed in oxidation of semiconductor compounds A3B5

Experimental study was made on the effect of time of electrochemical oxidation of indium antimonide and indium arsenide on structural perfection of their near-the-surface layers. It is shown that electrochemical oxidation of indium antimonide and arsenide leads to nonmonotonous change of structural perfection of near-the-surface layer of semiconductor with increase of oxidation time. Various type defects, formed in oxidation of indium antimonide and indium arsenide, are based on clusters of Frenkel defects