Published January 2005
| Version v1
Journal article
The effect of an interfacial oxide layer on electroluminescence efficiency in metal-quantum size semiconductor heterostructures In(Ga)As/GaAs
- 1. Nauchno-Issledovatel'skij Fiziko-Tekhnicheskij Inst. Nizhegorodskogo Gosudarstvennogo Univ. im. N.I. Lobachevskogo, Nizhnij Novgorod (Russian Federation)
Description
Light emitting properties of the quantum size GaAs/In(Ga)As/GaAs heterostructures with Schottky barrier were investigated. The effect of different surface treatments of these structures on electroluminescence (EL) efficiency of forward-biased Schottky diodes was studied. It was established that CCl4 surface exposure at 580 deg C followed by anode oxidation enhance the EL intensity most of all. It was shown that the presence of a tunnel-thin interfacial anode oxide is the important factor for providing the injection of minority carriers from metal into gallium arsenide. The EL efficiency depends substantially on anodic oxide thickness
Abstract (Russian)
Исследовано влияние различных способов обработки поверхности квантово-размерных гетероструктур GaAs/In(Ga)As/GaAs на эффективность электролюминесценции изготовленных на их основе диодов с барьером Шоттки. Установлено, что наибольший эффект увеличения интенсивности электролюминесценции наблюдается от экспонирования поверхности в CCl4 при температуре 580 град С с последующим анодным окислением. Показано, что промежуточный туннельно-тонкий анодный окисел играет важную роль в обеспечении инжекции неосновных носителей из металла в арсенид галлия. Эффективность электролюминесценции существенно зависит от толщины анодного окислаAdditional details
Additional titles
- Original title (Russian)
- Влияние промежуточного окисного слоя в гетероструктурах металл-квантово-размерный полупроводник Ин(Га)Ас/GaAs
Publishing Information
- Journal Title
- Fizika i Tekhnika Poluprovodnikov
- Journal Volume
- 39
- Journal Issue
- 1
- Journal Page Range
- p. 25-29
- ISSN
- 0015-3222
- CODEN
- FTPPA4
Conference
- Title
- Nanophotonics-2004
- Original Conference Title
- Soveshchanie: Nanofotonika-2004
- Acronym
- Conference
- Dates
- 2-6 May 2004
- Place
- Nizhnij Novgorod (Russian Federation)
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 37104062
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANODIZATION; CARBON TETRACHLORIDE; CHARGE CARRIERS; ELECTROLUMINESCENCE; EMISSION SPECTRA; EPITAXY; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; NANOSTRUCTURES; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SCHOTTKY BARRIER DIODES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; THICKNESS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHEMICAL COATING; CHLORINATED ALIPHATIC HYDROCARBONS; CORROSION PROTECTION; CRYSTAL GROWTH METHODS; DEPOSITION; DIMENSIONS; EFFICIENCY; ELECTROCHEMICAL COATING; ELECTROLYSIS; EMISSION; GALLIUM COMPOUNDS; HALOGENATED ALIPHATIC HYDROCARBONS; INDIUM COMPOUNDS; LUMINESCENCE; LYSIS; ORGANIC CHLORINE COMPOUNDS; ORGANIC COMPOUNDS; ORGANIC HALOGEN COMPOUNDS; PHOTON EMISSION; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SPECTRA; SURFACE COATING; TEMPERATURE RANGE
Optional Information
- Notes
- 12 refs., 4 figs.