Evaluation of bonding between oxygen plasma treated polydimethyl siloxane and passivated silicon
- 1. Bioelectronics/BioMEMS Laboratory, Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117685 (Singapore)
- 2. Semiconductor Process Technologies Laboratory, Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117685 (Singapore)
Description
Oxygen plasma treatment has been used extensively to bond polydimethyl siloxane to polydimethyl siloxane or glass in the rapid prototyping of microfluidic devices. This study aimed to improve the bonding quality of polydimethyl siloxane to passivated silicon using oxygen plasma treatment, and also to evaluate the bonding quality. Four types of passivated silicon were used: phosphosilicate glass, undoped silicate glass, silicon nitride and thermally grown silicon dioxide. Bonding strength was evaluated qualitatively and quantitatively using manual peel and mechanical shear tests respectively. Through peel tests we found that the lowering of plasma pressure from 500 to 30 mTorr and using a plasma power between 20 to 60 W helped to improve the bond quality for the first three types of passivation. Detailed analysis and discussion were conducted to explain the discrepancy between the bonding strength results and peeling results. Our results suggested that polydimethyl siloxane can be effectively bonded to passivated silicon, just as to polydimethyl siloxane or glass
Availability note (English)
Available online at http://stacks.iop.org/1742-6596/34/155/jpconf6_34_026.pdf or at the Web site for the Journal of Physics. Conference Series (Online) (ISSN 1742-6596) http://www.iop.org/Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 34
- Journal Issue
- 1
- Journal Page Range
- p. 155-161
- ISSN
- 1742-6596
Conference
- Title
- International MEMS conference 2006
- Acronym
- iMEMS2006
- Dates
- 9-12 May 2006
- Place
- Singapore (Singapore)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37058496
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BONDING; ELECTROMECHANICS; EVALUATION; GLASS; MICROSTRUCTURE; OXYGEN; PASSIVATION; PLASMA; PLASMA PRESSURE; SHEAR; SILICATES; SILICON; SILICON NITRIDES; SILICON OXIDES
- Descriptors DEC
- CHALCOGENIDES; ELEMENTS; FABRICATION; JOINING; MECHANICS; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PNICTIDES; SEMIMETALS; SILICON COMPOUNDS