Published April 1, 2006 | Version v1
Journal article

Evaluation of bonding between oxygen plasma treated polydimethyl siloxane and passivated silicon

  • 1. Bioelectronics/BioMEMS Laboratory, Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117685 (Singapore)
  • 2. Semiconductor Process Technologies Laboratory, Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117685 (Singapore)

Description

Oxygen plasma treatment has been used extensively to bond polydimethyl siloxane to polydimethyl siloxane or glass in the rapid prototyping of microfluidic devices. This study aimed to improve the bonding quality of polydimethyl siloxane to passivated silicon using oxygen plasma treatment, and also to evaluate the bonding quality. Four types of passivated silicon were used: phosphosilicate glass, undoped silicate glass, silicon nitride and thermally grown silicon dioxide. Bonding strength was evaluated qualitatively and quantitatively using manual peel and mechanical shear tests respectively. Through peel tests we found that the lowering of plasma pressure from 500 to 30 mTorr and using a plasma power between 20 to 60 W helped to improve the bond quality for the first three types of passivation. Detailed analysis and discussion were conducted to explain the discrepancy between the bonding strength results and peeling results. Our results suggested that polydimethyl siloxane can be effectively bonded to passivated silicon, just as to polydimethyl siloxane or glass

Availability note (English)

Available online at http://stacks.iop.org/1742-6596/34/155/jpconf6_34_026.pdf or at the Web site for the Journal of Physics. Conference Series (Online) (ISSN 1742-6596) http://www.iop.org/

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
34
Journal Issue
1
Journal Page Range
p. 155-161
ISSN
1742-6596

Conference

Title
International MEMS conference 2006
Acronym
iMEMS2006
Dates
9-12 May 2006
Place
Singapore (Singapore)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
37058496
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
BONDING; ELECTROMECHANICS; EVALUATION; GLASS; MICROSTRUCTURE; OXYGEN; PASSIVATION; PLASMA; PLASMA PRESSURE; SHEAR; SILICATES; SILICON; SILICON NITRIDES; SILICON OXIDES
Descriptors DEC
CHALCOGENIDES; ELEMENTS; FABRICATION; JOINING; MECHANICS; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PNICTIDES; SEMIMETALS; SILICON COMPOUNDS