Published November 20, 2019 | Version v1
Journal article

Oxygen vacancy migration along dislocations in SrTiO3 studied by cathodoluminescence

  • 1. Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018 (China)
  • 2. International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044 (Japan)
  • 3. Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)
  • 4. University of Tsukuba, Tsukuba 305-8577 (Japan)

Description

The impact of dislocations on oxygen vacancies in un-doped SrTiO3 single crystal has been investigated by cathodoluminescence (CL). The dominated luminescence peak located at ∼2.8 eV is originated from oxygen vacancies. Enhanced luminescence has been observed at specific dislocations with the accumulation of oxygen vacancies. Under annealing either in oxidizing or reducing atmosphere, the diffusivity of oxygen ions at dislocation cores is nearly the same as that in the bulk. CL results suggest that the accumulation of oxygen vacancies is easily triggered by dislocations, while the diffusion of oxygen vacancies may not be significantly affected. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6463/ab3b3e

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
52
Journal Issue
47
Journal Page Range
[6 p.]
ISSN
0022-3727
CODEN
JPAPBE