Czochralski silicon detectors irradiated with 24GeV/c and 10MeV protons
Creators
- 1. Helsinki Institute of Physics, P.O. Box 64, 00014 Helsinki University (Finland)
- 2. Ioffe Physico-Technical Institute of Russian Academy of Sciences, St. Petersburg (Russian Federation)
- 3. Accelerator Laboratory, Jyvaeskylae University (Finland)
- 4. Lappeenranta University of Technology, Lappeenranta (Finland)
Description
We have irradiated Czochralski silicon (Cz-Si) and Float Zone silicon (Fz-Si) detectors with 24GeV/c and 10MeV protons. Samples were characterized with Capacitance-Voltage measurements (CV), Transient Current Technique (TCT) and secondary electron backscattering recorded by Scanning Electron Microscope (SEM). We present the evolution of the effective doping concentration as a function of irradiation fluence as well as the introduction rate of negative space charge, β-parameter. According to these measurements, we found that Cz-Si is more radiation hard than Fz-Si. Both TCT and SEM measurements indicated that Space Charge Sign Inversion (SCSI) occurred in the heavily irradiated Fz-Si and in the Cz-Si irradiated with 10MeV protons. However, the SCSI did not take place in Cz-Si irradiated with 24GeV/c protons even after high irradiation fluence
Additional details
Identifiers
- DOI
- 10.1016/j.nima.2006.05.208;
- PII
- S0168-9002(06)01091-6;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 568
- Journal Issue
- 1
- Journal Page Range
- p. 83-88
- ISSN
- 0168-9002
- CODEN
- NIMAER
Conference
- Title
- 10. European symposium on semiconductor detectors
- Dates
- 12-16 Jun 2005
- Place
- Wildbad Kreuth (Germany)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38037255
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BACKSCATTERING; CAPACITANCE; ELECTRIC POTENTIAL; ELECTRONS; IRRADIATION; PROTONS; SCANNING ELECTRON MICROSCOPY; SI SEMICONDUCTOR DETECTORS; SILICON; SPACE CHARGE; TWO-COMPONENT TORUS
- Descriptors DEC
- BARYONS; CLOSED PLASMA DEVICES; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; HADRONS; LEPTONS; MEASURING INSTRUMENTS; MICROSCOPY; NUCLEONS; PHYSICAL PROPERTIES; RADIATION DETECTORS; SCATTERING; SEMICONDUCTOR DETECTORS; SEMIMETALS; THERMONUCLEAR DEVICES; TOKAMAK DEVICES
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.