Published April 1994 | Version v1
Journal article Metadata-only

Obtaining and electrical properties of gallium antimonide crystals doped with gadolinium

Creators

Description

Gallium antimonide doping with gadolinium is investigated. It is shown that gadolinium doping contributes to decreasing the natural intrinsic defect concentration. With gadolinium content increasing in the melt is grown the cluster mechanism contribution in charge carrier scattering. Parameters of cluster formation are estimated

Additional details

Additional titles

Original title (Russian)
Получение и электрические свойства кристаллов антимонида галлия, легированного гадолинием

Publishing Information

Journal Title
Neorganicheskie Materialy
Journal Volume
30
Journal Issue
4
Journal Page Range
p. 457-459.
ISSN
0002-337X
CODEN
NEOMB8

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
26036738
Subject category
S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
Descriptors DEI
ANTIMONIDES; CARRIER MOBILITY; CHARGE CARRIERS; CLUSTER MODEL; CONCENTRATION RATIO; ELECTRIC CONDUCTIVITY; GADOLINIUM ADDITIONS; GALLIUM ALLOYS; MONOCRYSTALS; P-TYPE CONDUCTORS; SYNTHESIS; TEMPERATURE DEPENDENCE
Descriptors DEC
ALLOYS; ANTIMONY COMPOUNDS; CRYSTALS; ELECTRICAL PROPERTIES; MATERIALS; MATHEMATICAL MODELS; MOBILITY; NUCLEAR MODELS; PHYSICAL PROPERTIES; PNICTIDES; RARE EARTH ADDITIONS; SEMICONDUCTOR MATERIALS