The investigation of dielectric characteristics of Au/SnO2/n-Si structure

The frequency dependence of dielectric constant (ε'''), dielectric loss (ε'''') and dielectric tangent (tanδ) are studied in the Au/SnO2/n-Si (MIS) structure. Frequency response of the dielectric properties of Au/SnO2/n-Si structure C-V and G/w-V were measured in the frequency rage 1 khz-1 MHz. While dielectric constant(ε''') decrease with increase frequency, in 10 khz to 1 MHz frequency range,ε'''' and tanδ descries. The samples having interfacial layer about 10 AA calculated from the corrected oxide capacitance according to Cox=C{1+(Gw/WCm)''2} . The evaluation of the experimental C-V and G/w-V data reveals of the ε''', ε'''' and tanδ are frequency. The measured small signal dielectric constant(ε'''), dielectric loss(ε'''') and dielectric tangent(tanδ) at 100 khz were 4.21, 3.47 and 0.82 respectively. Especially below 100 khz both ε''' and ε'''' increasing with decreasing log frequency and there is a loss peak (ε'''') about 1 MHz. Such behaviours have been observed by several author in the literature