Published February 1996
| Version v1
Journal article
Spectrum of radiation diffracted by laser-induced gratings in GaAs/AlGaAs quantum wells
Creators
- 1. Microelectronics Center, Danish Technical University, D-2800 Lingbi (Denmark)
- 2. Institute of Problems of Microelectronics Technology and Especially Pure Materials, Russian Academy of Sciences, 142432 Chernogolovka, Moscow Province (Russian Federation)
Description
A study has been made of the effect of microscopic roughness on the shape of the spectrum of radiation diffracted by laser-induced gratings in GaAs/AlGaAs quantum wells. The line profile was analyzed by using the composite complex permittivity profile that takes into account fluctuations in the resonance energy of the excited states. It is found from detailed comparison of the theory with the experimental results that the interface of the quantum well grown by molecular-beam epitaxy has 'islands' of height equal to 1 monolayer (2.83 A) with longitudinal dimensions much greater than the exciton diameter; they are covered by nano-size regions of roughness of diameter 80-90 A
Additional details
Publishing Information
- Journal Title
- Journal of Experimental and Theoretical Physics
- Journal Volume
- 82
- Journal Issue
- 2
- Journal Page Range
- p. 356-360
- ISSN
- 1063-7761
- CODEN
- JTPHES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35076002
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Translation
- Descriptors DEI
- ALUMINIUM ARSENIDES; DIFFRACTION; DIFFRACTION GRATINGS; EXCITED STATES; GALLIUM ARSENIDES; GRATINGS; INTERFACES; LASERS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PERMITTIVITY; QUANTUM WELLS; RESONANCE; ROUGHNESS; VISIBLE RADIATION
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIELECTRIC PROPERTIES; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ENERGY LEVELS; EPITAXY; GALLIUM COMPOUNDS; NANOSTRUCTURES; PHYSICAL PROPERTIES; PNICTIDES; RADIATIONS; SCATTERING; SURFACE PROPERTIES
Optional Information
- Notes
- Translated from Zhurnal Ehksperimental'noj i Teoreticheskoj Fiziki, ISSN 0044-4510, 109, 665-673 (February 1996); (c) 1996 American Institute of Physics.