Rates of recombination-induced radiation processes in F-like ions

Electron-ion recombination proceeds via direct or indirect modes. The direct mode includes three-body recombination (TBR) and one-step radiative recombination (RR). The indirect resonant mode is a two-step dielectronic recombination (DR). All recombination processes lead to the emission of X-rays during the relaxation of excited ions. however, DR is the most efficient mechanism in the emission of such radiation and therefore causes self-cooling of thermal astrophysical and artificial plasmas. In the present paper, the DR rates are computed for F-like Si51, Ar0+, Ti134 and Zn21+ ions with 1s-excitation. It is found that, the group of resonant states of the form 1s2s2 2 p 6np, alone, have the highest contribution ranging from 40% to 54% to the total DR rates for Zn21+ and Si51 ions respectively. In addition, the total DR rates increase as the effective charge of the ions increases