Fundamental studies of chemical vapor deposition diamond growth processes
Description
We are developing laser spectroscopic techniques to foster a fundamental understanding of diamond film growth by hot filament chemical vapor deposition (CVD). Several spectroscopic techniques are under investigation to identify intermediate species present in the bulk reactor volume, the thin active volume immediately above the growing film, and the actual growing surface. Such a comprehensive examination of the overall deposition process is necessary because a combination of gas phase and surface chemistry is probably operating. Resonantly enhanced multiphoton ionization (REMPI) techniques have been emphasized. A growth rector that permits through-the-substrate gas sampling for REMPI/time-of-flight mass spectroscopy has been developed. 7 refs., 2 figs
Availability note (English)
MF available from INIS under the Report Number; OSTI as DE91015324; NTIS; INIS; US Govt. Printing Office Dep.Files
23001004.pdf
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Additional details
Publishing Information
- Imprint Pagination
- 5 p.
- Report number
- CONF-9107115--10
Conference
- Title
- Society of Photo-Optical Instrumentation Engineers (SPIE) meeting.
- Dates
- 21-26 Jul 1991.
- Place
- San Diego, CA (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 23001004
- Subject category
- S36: MATERIALS SCIENCE; S42: ENGINEERING;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BOUNDARY LAYERS; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DIAGNOSTIC TECHNIQUES; DIAMONDS; FILMS; GASES; HYDROCARBONS; HYDROGEN; LASER SPECTROSCOPY; METHANE; SILICON; SURFACE POTENTIAL
- Descriptors DEC
- ALKANES; CARBON; CHEMICAL COATING; DEPOSITION; ELEMENTS; FLUIDS; LAYERS; MINERALS; NONMETALS; ORGANIC COMPOUNDS; POTENTIALS; SEMIMETALS; SPECTROSCOPY; SURFACE COATING
Optional Information
- Contract/Grant/Project number
- Contract AC05-84OR21400
- Funding organization
- USDOE, Washington, DC (United States).