Published May 2002
| Version v1
Journal article
X-ray emission analysis of Si:H layers structure obtained by low-energy hydrogen ion implantation
Creators
- 1. Inst. Fiziki Metallov UrO RAN, Ekaterinburg (Russian Federation)
- 2. Inst. Fiziki Poluprovodnikov SO RAN, Novosibirsk (Russian Federation)
Description
Ultrasoft X-ray emission spectroscopy method with variation of the excitation electron energy was applied to the study of amorphous silicon layers obtained by implantation of hydrogen ions with the energy of 24 keV into SiO2/Si and Si at the doses of 2.7 x 1017 and 2.1 x 1017 cm-3, respectively. It was found that throughout the implantation, the amorphization of the silicon near-surface ions into silicon with oxide films on the surface leads to the forming of a more temperature stable Si:H layer
Abstract (Russian)
Слои аморфного кремния, полученные имплантацией ионов водорода с энергией 24 кэВ в SiO2/Si и Si дозами соответственно 2.7 x 1017 и 2.1 x 1017 см-3, исследованы методом ультрамягкой рентгеновской эмиссионной спектроскопии с вариацией энергии возбуждающих электронов. Установлено, что при имплантации происходит аморфизация приповерхностного слоя кремния толщиной до 150-200 нм. Имплантация ионов водорода в кремний с пленкой окисла на поверхности приводит к формированию слоя, имеющего большую температурную стабильностьAdditional details
Additional titles
- Original title (Russian)
- Rentgenoehmissionnoe issledovanie struktury sloev Si:H, sformirovannykh implantatsiej ionov vodoroda s nizkoj ehnergiej
Publishing Information
- Journal Title
- Fizika i Tekhnika Poluprovodnikov
- Journal Volume
- 36
- Journal Issue
- 5
- Journal Page Range
- p. 598-603
- ISSN
- 0015-3222
- CODEN
- FTPPA4
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 34065074
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AMORPHOUS STATE; ANNEALING; CRYSTAL-PHASE TRANSFORMATIONS; DEPTH; HYDRIDATION; HYDROGEN IONS 1 PLUS; ION IMPLANTATION; KEV RANGE 10-100; RADIATION DOSES; SILICON; SILICON OXIDES; SOFT X RADIATION; SPATIAL DISTRIBUTION; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 1000-4000 K; TEMPERATURE RANGE OVER 4000 K; X-RAY EMISSION ANALYSIS; X-RAY SPECTROSCOPY
- Descriptors DEC
- CATIONS; CHALCOGENIDES; CHARGED PARTICLES; CHEMICAL ANALYSIS; CHEMICAL REACTIONS; DIMENSIONS; DISTRIBUTION; DOSES; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; HYDROGEN IONS; IONIZING RADIATIONS; IONS; KEV RANGE; NONDESTRUCTIVE ANALYSIS; OXIDES; OXYGEN COMPOUNDS; PHASE TRANSFORMATIONS; RADIATIONS; SEMIMETALS; SILICON COMPOUNDS; SPECTROSCOPY; TEMPERATURE RANGE; X RADIATION
Optional Information
- Notes
- 10 refs., 5 figs.