Published April 15, 2013 | Version v1
Journal article

A study of copper oxide based resistive switching memory by conductive atom force microscope

  • 1. Department of Materials Science, Fudan University, No. 220 HanDan Road, Shanghai, 200433 (China)
  • 2. Department of Microelectronics, ASIC and System State Key Lab, Fudan University, Shanghai, 200433 (China)

Description

A copper oxide (CuxO) layer was formed by applying plasma oxidization on a copper film grown on a Si substrate. Pt deposited on this CuxO layer then function as the top electrode to form a Pt/CuxO/Cu structure. A device created with this structure exhibited a forming-free bipolar resistive switching property. Conductive atom force microscope (C-AFM) was employed to investigate the nanoscale electrical properties of the device. Based on I–V curve analysis, it was found that the Poole–Frankel and conducting filaments models were suitable for the present device. C-AFM analysis for the sample indicated that the random formation/rupture of conducting paths in the CuxO layer may play a key role for the device instability in high resistance state.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apsusc.2013.01.217

Additional details

Identifiers

DOI
10.1016/j.apsusc.2013.01.217;
PII
S0169-4332(13)00292-4;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
271
Journal Page Range
p. 407-411
ISSN
0169-4332
CODEN
ASUSEE

Optional Information

Copyright
Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.