Design of microelectronic thermal detectors for high resolution radiation spectroscopy
Creators
- 1. Dept. of Physics, Chalmers Univ. of Technology, Gothenburg (Sweden)
- 2. Dept. of Solid State Electronics, Chalmers Univ. of Tech., Gothenburg (Sweden)
Description
A crystalline, silicon, microelectronic, cryogenic, thermal detector for single quanta of low energy radiation and high resolution spectroscopy in being developed. Its volume is less than 0.1 mm3. The constituent parts of the detector are integrated in one unit by micromachining. The dependence of the resistance of the thermistor on temperature (R-T characteristics) has been studied experimentally. The influence of changes in the implantation dose of the thermistor on the R-T characteristics has also been studied. To obtain the best energy resolution of the detector the optimal implantation dose of the thermistor has been determined. The amplified detector pulses were fed into a Macintosh computer via an especially developed computer interface. The operation of the detector was tested by sampling gamma, X-ray and electron spectra from a 109Cd source. (orig.)
Additional details
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 342
- Journal Issue
- 2-3
- Journal Page Range
- p. 504-508.
- ISSN
- 0168-9002
- CODEN
- NIMAER
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 25052784
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S73: NUCLEAR PHYSICS AND RADIATION PHYSICS; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- CADMIUM 109; CRYOGENICS; DE-EXCITATION; DIMENSIONS; ELECTRIC CONDUCTIVITY; ELECTRON CAPTURE DECAY; ELECTRON DETECTION; ELECTRON SPECTRA; ENERGY SPECTRA; EQUIPMENT INTERFACES; EXCITED STATES; EXPERIMENTAL DATA; GAMMA DETECTION; INTEGRATED CIRCUITS; ION IMPLANTATION; K CONVERSION; L CONVERSION; OPTIMIZATION; PHYSICAL RADIATION EFFECTS; RADIATION DETECTORS; RADIATION DOSES; READOUT SYSTEMS; SI SEMICONDUCTOR DETECTORS; SILICON; SILVER 109; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; THERMISTORS; X-RAY DETECTION; X-RAY SPECTRA
- Descriptors DEC
- BETA DECAY; BETA DECAY RADIOISOTOPES; CADMIUM ISOTOPES; CHARGED PARTICLE DETECTION; CONVERSION; DATA; DECAY; DETECTION; ELECTRICAL PROPERTIES; ELECTRON CAPTURE RADIOISOTOPES; ELECTRONIC CIRCUITS; ELEMENTS; ENERGY LEVELS; ENERGY-LEVEL TRANSITIONS; EVEN-ODD NUCLEI; INFORMATION; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION; INTERNAL CONVERSION RADIOISOTOPES; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; MEASURING INSTRUMENTS; NUCLEAR DECAY; NUCLEI; NUMERICAL DATA; ODD-EVEN NUCLEI; PHYSICAL PROPERTIES; RADIATION DETECTION; RADIATION EFFECTS; RADIOISOTOPES; SECONDS LIVING RADIOISOTOPES; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR DEVICES; SEMIMETALS; SILVER ISOTOPES; SPECTRA; STABLE ISOTOPES; TEMPERATURE RANGE; YEARS LIVING RADIOISOTOPES