Effect of ion bombardment on the field emission property of tetrapod ZnO
- 1. Department of Basic Courses, Nanjing Institute of technology, Nanjing 210013 (China)
- 2. School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China)
- 3. Jiangsu Information Display Engineering Research Center, Nanjing 210096 (China)
- 4. School of Physics and Technology, Nanjing Normal University, Nanjing 210097 (China)
Description
The influences of ion bombardment on the field emission performance of tetrapod ZnO nanostructures are reported. As the scanning electron microscopy images and photoluminescence spectrum show, the tips of the field emitters are destroyed and the surface state of the field emitters is also changed after the ion bombardment. The ion bombardment has a considerable effect on the field emission properties of the tetrapod ZnO field emitters. After Ar+ ion bombardment with the energy of 3 keV and the ion current of 0.05 μA for 30 min, the turn-on field increases about 63% and the threshold field increases about 77%, respectively. There are two main reasons for the variation in field-emission property: (1) the decrement of the field enhancement factor β, which is caused by the variation in morphology of field emitter; (2) the increment of work function φ, which is caused by the changed concentration of the surface oxygen vacancy.
Additional details
Identifiers
- DOI
- 10.1063/1.3319655;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 107
- Journal Issue
- 5
- Journal Page Range
- p. 054506-054506.4
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42069836
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ARGON IONS; CRYSTALS; ELECTRONS; EMISSION SPECTRA; EMISSION SPECTROSCOPY; FIELD EMISSION; ION BEAMS; ION IMPLANTATION; KEV RANGE; MORPHOLOGY; NANOSTRUCTURES; PHOTOLUMINESCENCE; PHYSICAL RADIATION EFFECTS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SURFACES; VACANCIES; WORK FUNCTIONS; ZINC OXIDES
- Descriptors DEC
- BEAMS; CHALCOGENIDES; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRON MICROSCOPY; ELEMENTARY PARTICLES; EMISSION; ENERGY RANGE; FERMIONS; FUNCTIONS; IONS; LEPTONS; LUMINESCENCE; MATERIALS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; POINT DEFECTS; RADIATION EFFECTS; SPECTRA; SPECTROSCOPY; ZINC COMPOUNDS
Optional Information
- Notes
- (c) 2010 American Institute of Physics