Department of Radiation Detectors: Overview

Full text: Work carried out in 1998 in the Department of Radiation Detectors concentrated on three subjects: (i) Semiconductor Detectors (ii) X-ray Tube Generators (iii) Material Modification Using Ion and Plasma Beams. SEMICONDUCTOR DETECTORS: Semiconductor detectors of ionizing radiation are among the basic tools utilized in such fields of research and industry as nuclear physics, high energy physics, medical (oncology) radiotherapy, radiological protection, environmental monitoring, energy dispersive X-ray fluorescence non-destructive analysis of chemical composition, nuclear power industry. The departmental objectives are: a search for new types of detectors; producing unique detectors tailored for physics experiments; manufacturing standard detectors for radiation measuring instruments; scientific development of the staff. These objectives were accomplished in 1998 particularly by: research on unique thin silicon detectors for identification of particles in E-ΔE telescopes, modernization of technology of manufacturing Ge(Li) detectors capable of detecting broader range of gamma energies, manufacturing detectors developed in previous years, re-generating and servicing customer detectors of various origin. In accomplishment of the above the Department co-operated with groups of physicists from IPJ, PAN Institute of Physics (Warsaw), and with some technology Institutes based in Warsaw (ITME, ITE). Some detectors and services have been delivered to customers on a commercial basis. X-Ray TUBE GENERATORS: The Department conducts research on design and technology of manufacturing X-ray generators as well as on imaging and dosimetry of X-ray beams. Various models of special construction X-ray tubes and their power supplies are under construction. In 1998 work concentrated on: completing laboratory equipment for manufacturing X-ray tubes and their components, developing technology of manufacturing X-ray tubes and their components, completing a laboratory set-up with CCD camera for imaging X-ray beams. In accomplishment of the above the Department cooperated with Dora Power Systems company. MATERIAL MODIFICATION USING ION AND PLASMA BEAMS: The technology of modifying surfaces of industrially used materials by means of continuous and pulsed energy beams has been intensely studied for more than 20 years. In some fields it is presently utilized on a broad scale in industry. A significant role among various methods is played by continuous or pulsed ion and plasma beams. The P-IX Department jointly with the P-V Department utilizes some unique sources of intense ion-plasma pulses, and makes use of intense continuous ion beams available in the P-I Department. The main objectives of the Department in this field are: searching for new, original ways of modifying surface properties of solid materials by means of pulsed plasma beams, implementation in the Institute and thus in the country the ion implantation technique as a method of improving the quality of parts of machinery and tools applied in industry. These objectives were in 1998 accomplished particularly by: advancing the construction of ion source built to improve quality of parts of machinery and tools applied in industry, research on metal-ceramic mixing (aimed at improving their tribological properties), reconnaissance on the market of commercial implantation services in industry, advancing diagnostics of pulsed plasma beams (power vs time measurement). (author)