Published November 1, 2013 | Version v1
Journal article Metadata-only

Rapid evaluation method for the normal lifetime of an infrared light-emitting diode

Creators

  • 1. Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

Description

Based on the Arrhenius model, a rapid evaluation method for an infrared diode's normal lifetime is proposed, and the theoretical model is constructed. Accelerated life testing of an infrared light-emitting diode (IRLED), which takes less time than usual, is carried out under temperature and electric current stress. Using this method, the activation energy and the IRLED's normal lifetime are calculated and analyzed. (semiconductor devices)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/34/11/114009

Additional details

Identifiers

DOI
10.1088/1674-4926/34/11/114009;

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
34
Journal Issue
11
Journal Page Range
[4 p.]
ISSN
1674-4926

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47010216
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ACTIVATION ENERGY; ELECTRIC CURRENTS; EVALUATION; LIFETIME; LIGHT EMITTING DIODES; STRESSES; TESTING
Descriptors DEC
CURRENTS; ENERGY; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES