Published September 1993
| Version v1
Journal article
Effect of temperature on the electrical resistivity of the Cd doped CuInS2 single crystals
Creators
- 1. Sardar Patel Univ., Vallabh Vidyanagar (India). Dept. of Physics
Description
Single crystals of CuInS-2 have been grown by the chemical vapour transport technique and annealed in different Cd concentrations. Crystal growth parameters, lattice parameters and annealing conditions have been determined. Low temperature resistivity, room temperature resistivity, Seebeck coefficient and Hall coefficient measurements of the specimens have been measured. The implications of these measurements have been discussed. (author). 16 refs., 5 figs., 4 tabs
Additional details
Publishing Information
- Journal Title
- Indian Journal of Physics. Part A
- Journal Volume
- 67
- Journal Issue
- 5
- Journal Page Range
- p. 437-443.
- ISSN
- 0252-9262
- CODEN
- INJADP
INIS
- Country of Publication
- India
- Country of Input or Organization
- India
- INIS RN
- 25051688
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; CADMIUM; CHALCOPYRITE; CHEMICAL PREPARATION; COPPER SULFIDES; CRYSTAL DOPING; CRYSTAL GROWTH; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; INDIUM SULFIDES; LATTICE PARAMETERS; MONOCRYSTALS; TEMPERATURE RANGE 0065-0273 K; X-RAY DIFFRACTION
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; COPPER COMPOUNDS; CRYSTALS; DIFFRACTION; ELECTRICAL PROPERTIES; ELEMENTS; HEAT TREATMENTS; INDIUM COMPOUNDS; MATERIALS; METALS; MINERALS; PHYSICAL PROPERTIES; SCATTERING; SULFIDE MINERALS; SULFIDES; SULFUR COMPOUNDS; SYNTHESIS; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS