Published October 1999 | Version v1
Journal article Metadata-only

Distinctive features of molecular-beam epitaxial growth of silicon on Si (100) surfaces in the presence of arsenic

Creators

  • 1. A.F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)
  • 2. Institute for Analytical Instrumentation, Russian Academy of Sciences, 198103 St. Petersburg (Russian Federation)

Description

The authors of this paper discuss their studies of the influence of background arsenic pressure on the properties of autoepitaxial layers of silicon grown on Si (100) surfaces by molecular-beam epitaxy. In these investigations the following experimental techniques were used: reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy, x-ray photoelectron spectroscopy, and secondary ion mass spectrometry

Additional details

Identifiers

DOI
10.1134/1.1187863;
PII
S1063-7826(99)00210-0;

Publishing Information

Journal Title
Semiconductors
Journal Volume
33
Journal Issue
10
Journal Page Range
p. 1054-1058
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35051809
Subject category
S36: MATERIALS SCIENCE; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Numerical Data, Translation
Descriptors DEI
ARSENIC; DEPOSITION; ELECTRON DIFFRACTION; EXPERIMENTAL DATA; MASS SPECTROSCOPY; MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SILICON; X-RAY PHOTOELECTRON SPECTROSCOPY
Descriptors DEC
COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DATA; DIFFRACTION; ELECTRON SPECTROSCOPY; ELEMENTS; EPITAXY; INFORMATION; MICROSCOPY; NUMERICAL DATA; PHOTOELECTRON SPECTROSCOPY; SCATTERING; SEMIMETALS; SPECTROSCOPY

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 33, 1158-1163 (October 1999); (c) 1999 American Institute of Physics.