Published April 1, 2019 | Version v1
Journal article

Optical Study of Ge1Sb2Te4 and GeSbTe thin films

  • 1. Centre of Applied Sciences, Department of Physics, Panjab University, Chandigarh, 160014 (India)

Description

Extensive optical study has been carried out on as-deposited and annealed thin films of Ge1Sb2Te4 and GeSbTe chalcogenides prepared through vacuum thermal evaporation on glass substrates. These films are found to be amorphous in nature for as-dep samples. The modifications that manifest in these films upon annealing are thoroughly investigated in view of the optical parameters. UV–vis spectroscopy has been utilized as the major tool for computation of optical constants, optical bandgap energy, urbach energy, skin depth, optical conductivity etc. Theoretical models for optical analysis like Wemple Di-Domenico model and Single Sellmier model have been applied to evaluate the dispersion energy parameters and oscillator parameters. Comparative analysis has been carried out which highlights the phase change characteristics of Ge1Sb2Te4 and non-phase change behavior of GeSbTe. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/2053-1591/aafc03

Additional details

Identifiers

Publishing Information

Journal Title
Materials Research Express (Online)
Journal Volume
6
Journal Issue
4
Journal Page Range
[9 p.]
ISSN
2053-1591

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
51103912
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANTIMONIDES; CALCULATION METHODS; GERMANIUM COMPOUNDS; THIN FILMS; VACUUM EVAPORATION
Descriptors DEC
ANTIMONY COMPOUNDS; EVAPORATION; FILMS; PHASE TRANSFORMATIONS; PNICTIDES