Published February 1, 2017 | Version v1
Journal article

Computer modelling of double doped SrAl2O4 for phosphor applications

  • 1. Lennard-Jones Laboratories, School of Physical and Geographical Sciences, Keele University, Keele, Staffordshire (United Kingdom)

Description

This paper describes a modelling study of SrAl2O4, which has applications as a phosphor material when doped with Eu2+ and Dy3+ ions. The procedure for modelling the pure and doped material is described and then results are presented for the single and double doped material. Solution energies are calculated and used to deduce dopant location, and mean field calculations are used to predict the effect of doping on crystal lattice parameter. Possible charge compensation mechanisms for Dy3+ ions substituting at a Sr2+ site are discussed. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1757-899X/169/1/012004

Additional details

Publishing Information

Journal Title
IOP Conference Series. Materials Science and Engineering (Online)
Journal Volume
169
Journal Issue
1
Journal Page Range
[5 p.]
ISSN
1757-899X

Conference

Title
2016 international conference on defects in insulating materials
Acronym
ICDIM 2016
Dates
10-15 Jul 2016
Place
Lyon (France)