Published 1981
| Version v1
Miscellaneous
Bulk defect formation in silicon implanted by ions of medium energies
- 1. Gor'kovskij Gosudarstvennyj Univ. (USSR). Issledovatel'skij Fiziko-Tekhnicheskij Inst.
Description
The results of experimental investigation of electrophysical parameters of nitrogen-implanted silicon found by measurements of Hall effect and the resistivity R between two ohmic contacts during implantation are reported. Measurements were performed on the reverse (unimplanted) side of the wafer. The obtained dependences make it possibile to suggest that interstitials or their associations are responsible for the changes of R. The methods of increasing the observed effect are given
Additional details
Additional titles
- Original title (Russian)
- Дефектообразование в обьеме при имплантации в кремнии ионов средних энергий
Publishing Information
- Imprint Title
- Radiation damage physics and radiation material science
- Journal Issue
- no 4(18
- Series
- Voprosy atomnoj nauki i tekhniki.
- Journal Page Range
- p. 80-81.
- Report number
- INIS-SU--148
Conference
- Title
- All-union conference on radiation physics of solids.
- Dates
- 24 - 27 Feb 1981.
- Place
- Zvenigorod (USSR).
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 14739104
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CARRIER DENSITY; CARRIER MOBILITY; ELECTRIC CONDUCTIVITY; ENERGY DEPENDENCE; HALL EFFECT; ION IMPLANTATION; NITROGEN IONS; POINT DEFECTS; SILICON; TIME DEPENDENCE
- Descriptors DEC
- CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELEMENTS; IONS; MOBILITY; PHYSICAL PROPERTIES; SEMIMETALS
Optional Information
- Notes
- 3 refs.; 2 figs. Imprint:Fizika radiatsionnykh povrezhdenij i radiatsionnoe materialovedenie.