Published 1988
| Version v1
Miscellaneous
Structural modifications in implanted indium phosphide layers on fast thermal annealing
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Strukturnye izmeneniya v implantatsionnykh sloyakh fosfida indiya pri bystrom termicheskom otzhige (BTO)
Publishing Information
- Imprint Title
- Summaries of reports of the 18. All-union conference on charged particle interaction with crystals
- Journal Page Range
- p. 115.
- Report number
- INIS-SU--98
Conference
- Title
- 18. All-union conference on charged particle interaction with crystals.
- Dates
- 30 May - 1 Jun 1988.
- Place
- Moscow (USSR).
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 20053838
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ANNEALING; DISLOCATIONS; HELIUM IONS; INDIUM PHOSPHIDES; ION CHANNELING; ION IMPLANTATION; KEV RANGE 100-1000; LAYERS; MEV RANGE 01-10; RADIATION DOSES; SILICON IONS; STACKING FAULTS; TWINNING; VERY HIGH TEMPERATURE
- Descriptors DEC
- ATOMIC IONS; CHANNELING; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ENERGY RANGE; HEAT TREATMENTS; INDIUM COMPOUNDS; IONS; KEV RANGE; LINE DEFECTS; MEV RANGE; PHOSPHIDES; PHOSPHORUS COMPOUNDS
Optional Information
- Notes
- Short note. Imprint:Tezisy dokladov 18. Vsesoyuznogo soveshchaniya po fizike vzaimodejstviya zaryazhennykh chastits s kristallami.