Published September 1999 | Version v1
Journal article Metadata-only

Photon recycling transport in bulk GaAs probed by μSR with laser irradiation

Creators

  • 1. High Energy Accelerator Research Organization (KEK-MSL), Meson Science Laboratory (Japan)
  • 2. Institute of Physical and Chemical Research (RIKEN), Muon Science Laboratory (Japan)

Description

A newly developed μSR method combined with a tunable, high power and sharply pulsed laser was applied to GaAs. Anomalous transport phenomena of the photo excited effects into bulk crystal were observed, given that the stopping range of implanted muons is about 200 times larger than photo-absorption depth. In addition, the measurement of photon energy dependence of muon spin depolarization under laser irradiation suggests the impurity level associated with MuBC0 is located within the band gap of GaAs

Additional details

Identifiers

DOI
10.1023/A:1017055119248;

Publishing Information

Journal Title
Hyperfine Interactions
Journal Volume
120-121
Journal Issue
1-8
Journal Page Range
p. 595-599
ISSN
0304-3843
CODEN
HYINDN

Conference

Title
11. international conference on hyperfine interactions
Dates
23-28 Aug 1998
Place
Durban (South Africa)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
40058282
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ABSORPTION; CRYSTALS; DEPOLARIZATION; DEPTH; ENERGY DEPENDENCE; GALLIUM ARSENIDES; IMPURITIES; LASER RADIATION; MUON SPIN RELAXATION; MUONS; PHOTONS; SPIN
Descriptors DEC
ANGULAR MOMENTUM; ARSENIC COMPOUNDS; ARSENIDES; BOSONS; DIMENSIONS; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; FERMIONS; GALLIUM COMPOUNDS; LEPTONS; MASSLESS PARTICLES; PARTICLE PROPERTIES; PNICTIDES; RADIATIONS; RELAXATION; SORPTION

Optional Information

Copyright
Copyright (c) 1999 Kluwer Academic Publishers