Influence of 30, 60, 100 keV energy argon ions on spectral photosensitivity of silicon n-p transitions

Processes of defect getting in silicon n - p structures of 30, 60 and 100 keV Ar+ ion irradiation both from the working surface and from the back side are investigated. Changes in long-wave spectral photosensitivity, characteristic of the introduction of recombination centres of n - p transition sublayer material to the basic part, were observed, although ranges of 30, 60 and 100 keV argon ions in silicon constitute 30, 60 and 100 mm respectively, and the depth of n - p transition occurrence is 500-700 nm. The effect is explained by the possibility of defect ranges for large distances, considerably exceeding the ranges of the ions introduced, and by the effect of secondary radiation, appearing in the process of ion braking, on the rearrangement of existing defects beyond the introduction region