Research and Application of Temperature-sensitive Characteristics of Gate Parameters in GaN high electron mobility transistors

A gallium nitride (GaN) high-electron-mobility transistors (HEMTs) operates in a high-frequency switching state, and its usage reliability is reduced when the temperature increases as a result of the increase of power density and size reduction. To measure the HEMT temperature increase based on the characteristics of the gate-source structure of the HEMT device, this paper proposes the use of reverse gate current as a thermo-sensitive parameter to measure the temperature and improve the temperature characteristics of the parameter by reasonably changing the gate voltage. A theoretical analysis of the reverse gate current components was carried out, and the trends and changes in its temperature characteristics were investigated. The influencing factors affecting the reverse gate current were discussed, and the phenomenon of the current's sudden change with temperature was explained. (paper)