Published March 2009
| Version v1
Journal article
Theoretical study of optical properties in deep ultraviolet Al-rich AlGaN/AIN quantum wells
Creators
- 1. Department of Electronics Engineering, Catholic University of Daegu, Hayang, Kyeongsan, Kyeongbuk 712-702 (Korea, Republic of)
Description
Optical properties of deep ultraviolet Al-rich AlGaN/AlN quantum wells (QWs) were theoretically investigated by using the multiband effective-mass theory. The theoretical PL transition wavelength is found to agree well with the experimental result. The internal field in AlGaN/AlN QW structures with lower Al contents is much larger than that in QW structures with higher Al contents. The intensity of the spontaneous emission spectra is shown to be improved with increasing Al content because the optical matrix elements are largely enhanced due to the reduced internal field
Availability note (English)
Available from http://dx.doi.org/10.1088/0268-1242/24/3/035002Additional details
Identifiers
- DOI
- 10.1088/0268-1242/24/3/035002;
- PII
- S0268-1242(09)94606-5;
Publishing Information
- Journal Title
- Semiconductor Science and Technology
- Journal Volume
- 24
- Journal Issue
- 3
- Journal Page Range
- [4 p.]
- ISSN
- 0268-1242
- CODEN
- SSTEET
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44091714
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM NITRIDES; EMISSION SPECTRA; MATRIX ELEMENTS; OPTICAL PROPERTIES; QUANTUM WELLS
- Descriptors DEC
- ALUMINIUM COMPOUNDS; NANOSTRUCTURES; NITRIDES; NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SPECTRA