Published March 2009 | Version v1
Journal article

Theoretical study of optical properties in deep ultraviolet Al-rich AlGaN/AIN quantum wells

Creators

  • 1. Department of Electronics Engineering, Catholic University of Daegu, Hayang, Kyeongsan, Kyeongbuk 712-702 (Korea, Republic of)

Description

Optical properties of deep ultraviolet Al-rich AlGaN/AlN quantum wells (QWs) were theoretically investigated by using the multiband effective-mass theory. The theoretical PL transition wavelength is found to agree well with the experimental result. The internal field in AlGaN/AlN QW structures with lower Al contents is much larger than that in QW structures with higher Al contents. The intensity of the spontaneous emission spectra is shown to be improved with increasing Al content because the optical matrix elements are largely enhanced due to the reduced internal field

Availability note (English)

Available from http://dx.doi.org/10.1088/0268-1242/24/3/035002

Additional details

Identifiers

DOI
10.1088/0268-1242/24/3/035002;
PII
S0268-1242(09)94606-5;

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
24
Journal Issue
3
Journal Page Range
[4 p.]
ISSN
0268-1242
CODEN
SSTEET

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44091714
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ALUMINIUM NITRIDES; EMISSION SPECTRA; MATRIX ELEMENTS; OPTICAL PROPERTIES; QUANTUM WELLS
Descriptors DEC
ALUMINIUM COMPOUNDS; NANOSTRUCTURES; NITRIDES; NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SPECTRA