Published January 2008 | Version v1
Journal article Metadata-only

50-170 keV proton irradiation on spectral response in GaAs/Ge space solar cell

Creators

  • 1. Harbin Inst. of Technology, Harbin (China)
  • 2. Tianjin Inst. of Power Source, Tianjin (China)

Description

The paper studies spectral response of GaAs/Ge solar cells irradiated to 1.0 x l011-3.0 x 1012 cm-2 by 100 keV protons, or irradiated to 3.0 x 1012 cm-2 by 50-170 keV protons. The results show that proton irradiation induces a great damage in optical characteristics of the solar cell, resulting from the large quantity of irradiation defects that would destroy crystal lattice integrity and reduce the diffusion distance of minority carrier, and thus increase the surface recombination velocity. The damage extent of GaAs/Ge solar cell increases with proton energy and dose in their ranges under investigation. (authors)

Additional details

Publishing Information

Journal Title
Nuclear Techniques
Journal Volume
31
Journal Issue
1
Journal Page Range
p. 31-34
ISSN
0253-3219

INIS

Country of Publication
China
Country of Input or Organization
China
INIS RN
40045264
Subject category
S36: MATERIALS SCIENCE; S14: SOLAR ENERGY;
Descriptors DEI
CRYSTAL LATTICES; DEFECTS; DIFFUSION; DISTANCE; GALLIUM ARSENIDES; GERMANIUM; IRRADIATION; KEV RANGE 100-1000; OPTICAL PROPERTIES; PHYSICAL RADIATION EFFECTS; PROTONS; RADIATION DOSES; RECOMBINATION; SOLAR CELLS; SPECTRAL RESPONSE
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; BARYONS; CRYSTAL STRUCTURE; DIRECT ENERGY CONVERTERS; DOSES; ELEMENTARY PARTICLES; ELEMENTS; ENERGY RANGE; EQUIPMENT; FERMIONS; GALLIUM COMPOUNDS; HADRONS; KEV RANGE; METALS; NUCLEONS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PHYSICAL PROPERTIES; PNICTIDES; RADIATION EFFECTS; SOLAR EQUIPMENT

Optional Information

Notes
4 figs., 8 refs.