Published 1987
| Version v1
Book
Blanket tungsten film formation by photo-enhanced and plasma-enhanced chemical vapor deposition
- 1. Production Engineering Research Lab., Hitachi, Ltd., Totsuka-ku, Yokohama 244 (Japan)
Description
Tungsten films have been deposited on SiO2 in WF6-H2 CVD system using A/sub r/F excimer laser radiation or hydrogen micro wave plasma. for these W films, conformal coverage over SiO2 steps on a Si substrate has been achieved. Resistivities of these W films range from 8 to 12 μΩ-cm, which are as low as those of W films deposited by thermal CVD. The activation energy of film formation was estimated to be 35 kJmol for photo-enhanced CVD and 39 kJmol for plasma-enhanced CVD. The kinetic data obtained suggests that the surface diffusion of hydrogen atoms is the deposition rate-limiting process and hydrogen atoms produced in the gas phase play a role for blanket deposition of tungsten films in the photo-enhanced CVD and plasma-enhanced CVD
Additional details
Publishing Information
- Publisher
- The Electrochemical Society.
- Imprint Place
- Pennington, NJ (USA)
- Imprint Title
- Multilevel metallization, interconnection, and contact technologies
- Journal Page Range
- p. 24-31.
Conference
- Title
- Multilevel metallization, interconnection, and contact technologies.
- Dates
- 19-24 Oct 1986.
- Place
- Boston, MA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 19082237
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ACTIVATION ENERGY; CHEMICAL REACTION KINETICS; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; EXCIMER LASERS; FABRICATION; HYDRIDES; HYDROGEN; LASER RADIATION; PLASMA; SILICON OXIDES; SUBSTRATES; TUNGSTEN; TUNGSTEN FLUORIDES; TUNGSTEN HYDRIDES
- Descriptors DEC
- AMPLIFIERS; CHALCOGENIDES; CHEMICAL COATING; DEPOSITION; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY; EQUIPMENT; FLUORIDES; FLUORINE COMPOUNDS; GAS LASERS; HALIDES; HALOGEN COMPOUNDS; HYDROGEN COMPOUNDS; KINETICS; LASERS; METALS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATIONS; REACTION KINETICS; SILICON COMPOUNDS; SURFACE COATING; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; TUNGSTEN COMPOUNDS