Published June 1986
| Version v1
Journal article
Dielectronic recombination at low temperatures. III. Recombination coefficients for Mg, Al, Si
Creators
- 1. Institute of Astronomy, Zuerich (Switzerland)
- 2. University College London (UK). Dept. of Physics and Astronomy
Description
Effective dielectronic recombination coefficients are calculated for the total recombination, as well as for selected lines and ground and metastable terms of ions of Mg, Al and Si. We restrict the calculation to those ions for which the recombining ion has n=3 valence electrons. Coupling schemes are discussed, and we conclude that in most cases pure LS coupling is not appropriate for the resonance states. The effective recombination coefficients are fitted to a convenient function of temperature in the range 103 K to 6 x 104 K
Additional details
Publishing Information
- Journal Title
- Astron. Astrophys., Suppl. Ser.
- Journal Volume
- 64
- Journal Issue
- 3
- Series
- Astron. Astrophys., Suppl. Ser.
- Journal Page Range
- 545-555
- ISSN
- 0365-0138
- CODEN
- AAESB
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 17075645
- Subject category
- S79: ASTROPHYSICS, COSMOLOGY AND ASTRONOMY;
- Descriptors DEI
- ALUMINIUM IONS; AUTOIONIZATION; COMPUTER CALCULATIONS; ELECTRON TEMPERATURE; ENERGY-LEVEL TRANSITIONS; GROUND STATES; ISOELECTRONIC ATOMS; L-S COUPLING; MAGNESIUM IONS; METASTABLE STATES; NEBULAE; RECOMBINATION; RYDBERG STATES; SILICON IONS; ULTRAHIGH TEMPERATURE; VERY HIGH TEMPERATURE
- Descriptors DEC
- ATOMIC IONS; ATOMS; CHARGED PARTICLES; COUPLING; ENERGY LEVELS; EXCITED STATES; INTERMEDIATE COUPLING; IONIZATION; IONS