Ellipsometric studies in the effect of the ion implantation and laser annealing on the optical constants of silicon

A dose of implantation and laser annealing have been studied for their effect on the ellipsometry parameters of optical radiation which was reflected from the Si surface and implanted with B+ and P+H+ ions. The optical constants of silicon are found to grow with the implantation doses, The refractive index decreases when the implanted doses correspond to the introduced impurity concentration (equal to 5x1020 cm-3)