Published June 1990 | Version v1
Journal article

Study on radiation damage of doped BGO by positron annihilation technique

  • 1. Tongji Unit., Shanghai, SH (China)
  • 2. Academia Sinica, Shanghai, SH (China). Shanghai Inst. of Ceramics

Description

The radiation damage of doped BGO is studied by measuring positron annihilation lifetimes and Doppler broadening S parameters. Under the irradiation of UV and Co-60 γ ray of 150 Gy, a new lifetime component has been observed for some doped BGOs, especially for impurity element Pb doped BGO. The results agree with those of a former study on the fluorescence output. Finally, the radiation damage mechanism is discussed

Additional details

Publishing Information

Journal Title
Nuclear Techniques
Journal Volume
13
Journal Issue
6
Series
Nucl. Tech.
Journal Page Range
327-331
ISSN
0253-3219
CODEN
NUTED