Published February 21, 2014 | Version v1
Journal article

Reassignment of the OSe−VCd complex in CdSe

  • 1. Technische Universität Dresden, 01062 Dresden (Germany)

Description

An IR absorption study of CdSe single crystals is presented. The as-received material revealed three absorption lines at 1094.2, 1107.5, and 1126.3 cm−1, which were previously assigned to the OSe−VCd complex [G. Chen et al., Phys. Rev. Lett. 101, 195502 (2008)] We show that each of the lines is accompanied by a number of weaker satellites with intensities which match the natural abundances of sulfur isotopes. In contrast to the original identification it is suggested that these peaks are local vibrational modes of a SOn complex. The three modes correspond to different orientations of the complex in the CdSe lattice. Arguments are presented in favor of 2 oxygen atoms (n = 2) in the complex. Measurements with uniaxial stress applied to the samples revealed defect symmetries and activation energies for the defect reorientation. The complex was found to be stable up to 750 °C

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1583
Journal Issue
1
Journal Page Range
p. 169-173
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
27. international conference on defects in semiconductors
Acronym
ICDS-2013
Dates
21-26 Jul 2013
Place
Bologna (Italy)

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45084913
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ABSORPTION; ACTIVATION ENERGY; CADMIUM SELENIDES; DEFECTS; MONOCRYSTALS; OXYGEN; PEAKS; STRESSES; SULFUR ISOTOPES
Descriptors DEC
CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTALS; ELEMENTS; ENERGY; ISOTOPES; NONMETALS; SELENIDES; SELENIUM COMPOUNDS; SORPTION

Optional Information

Notes
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