X-ray-induced electronic structure change in CuIr2S4

The electronic structure of CuIr2S4 is investigated using various bulk-sensitive x-ray spectroscopic methods near the Ir L3 edge: resonant inelastic x-ray scattering (RIXS), x-ray absorption spectroscopy in the partial fluorescence yield mode, and resonant x-ray emission spectroscopy. A strong RIXS signal (0.75 eV) resulting from a charge-density-wave gap opening is observed below the metal-insulator transition temperature of 230 K. The resultant modification of electronic structure is consistent with the density functional theory prediction. In the spin- and charge-dimer disordered phase induced by x-ray irradiation below 50 K, we find that a broad peak around 0.4 eV appears in the RIXS spectrum.