Implantation of 29Si into GaAs {100}: surface analysis and modelling of the dopant distribution

Secondary Ion Mass Spectrometry (SIMS) concentration profiles have been measured for 29Si ions implanted into GaAs {100} in the energy range of 30 to 400 keV and at doses from 5 x 1012 to 5 x 1014 cm-2. It was found that these profiles could be fitted successfully to Pearson IV distributions enabling the establishment of projected range statistics for modelling purposes. The Si concentration profiles were found to be a function of not only implantation energy but also of the tilt and twist angles of the substrate wafer and of the implant dose. Raman spectroscopy was used to monitor the disorder induced in the GAAs substrate by the Si implantation. The SIMS profiles are discussed in terms of planar channelling of the Si ions and the Raman data are used in interpreting the dose dependence of the profiles. (author)