Published February 1, 2019 | Version v1
Journal article Metadata-only

Improvement in IGZO-based thin film transistor performance using a dual-channel structure and electron-beam-irradiation

Creators

  • 1. Nano-Convergence Materials Center, Korea Institute of Ceramic Engineering and Technology, 101 Soho-ro, Jinju-si, Gyeongsangam-do, 52851 (Korea, Republic of)

Description

We investigated the effects of electron-beam-irradiation (EBI) on amorphous indium gallium zinc oxide (IGZO) films deposited by RF magnetron sputtering. The device performance of thin film transistors (TFTs) fabricated from these films was also evaluated. We conducted transmission electron microscopy and x-ray photoelectron spectroscopy to analyze the microstructure and chemical state of the synthesized IGZO. The EBI-treated IGZO TFTs achieved higher carrier mobility and on/off ratio than conventionally annealed IGZO TFTs. In addition, we found that a dual-channel structure shows electrical characteristics superior to those of a single-channel structure, with a carrier mobility of 18.1 cm2/V · s. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6641/aafa0c

Additional details

Identifiers

DOI
10.1088/1361-6641/aafa0c;

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
34
Journal Issue
2
Journal Page Range
[8 p.]
ISSN
0268-1242
CODEN
SSTEET

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
52034685
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
ANNEALING; CARRIER MOBILITY; CHEMICAL STATE; DEPOSITS; ELECTRON BEAM ION SOURCES; ELECTRON BEAMS; GALLIUM; INDIUM; IRRADIATION; MAGNETRONS; MICROSTRUCTURE; PERFORMANCE; SPUTTERING; THIN FILMS; TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES
Descriptors DEC
BEAMS; CHALCOGENIDES; ELECTRON MICROSCOPY; ELECTRON SPECTROSCOPY; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; FILMS; HEAT TREATMENTS; ION SOURCES; LEPTON BEAMS; METALS; MICROSCOPY; MICROWAVE EQUIPMENT; MICROWAVE TUBES; MOBILITY; OXIDES; OXYGEN COMPOUNDS; PARTICLE BEAMS; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTOR DEVICES; SPECTROSCOPY; ZINC COMPOUNDS