Published June 1988
| Version v1
Journal article
Passivation of impurities and radiation-induced defects by hydrogen in p-type silicon
- 1. AN Kazakhskoj SSR, Alma-Ata. Inst. Fiziki Vysokikh Ehnergij
Description
Passivation of boron and radiation defects by atomic hydrogen in silicon was investigated. IR absorption bands identified with Si-H-oscillations of a passivated acceptor center are detected. Effect of temperature and time of processing in a hydrogen plasma on the processes of boron atom passivation and electrophysical properties of n+-p-structures are studied
Additional details
Additional titles
- Original title (Russian)
- Пассивация примесей и радиационных дефектов водородом в кремнии п-типа
Publishing Information
- Journal Title
- Fizika i Tekhnika Poluprovodnikov
- Journal Volume
- 22
- Journal Issue
- 6
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 1020-1024
- ISSN
- 0015-3222
- CODEN
- FTPPA
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 20009703
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ABSORPTION SPECTRA; ANNEALING; BORON ADDITIONS; CRYSTAL DEFECTS; DEUTERIUM IONS; ELECTRIC CONDUCTIVITY; HIGH TEMPERATURE; HYDROGEN IONS; INFRARED SPECTRA; ION IMPLANTATION; LOW TEMPERATURE; MEDIUM TEMPERATURE; MEV RANGE 10-100; P-N JUNCTIONS; P-TYPE CONDUCTORS; SILICON; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CHARGED PARTICLES; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; IONS; MATERIALS; MEV RANGE; PHYSICAL PROPERTIES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SEMIMETALS; SPECTRA